scd resister ,Transistor color coding
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Name of
component
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Symbol
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Specifications
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P N Junction Diode
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IN4007
average voltage = 817 mV,
Maximum Temperature= 58.4°C.
Maximum reverse current=5.0µA
Forward voltage (IF)=1.0V
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Zener Diode
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Juncation Temperature: -65
to +175
Voltage Vz at 5mA 4.8 V min
5.1 V typ
5.4 V max
Breakdown Voltage: 6.3V
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NPN
Transistor
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Collector
Emitter Voltage : 50V
Collector
Base Voltage : 60V
Emitter
Base Voltage : 5V
Power
Dissipation : 800W
Operating
& Storage Junction : -55
to 175 c
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PNP Transistor
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·
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Typical Gain: 100 to 400 Maximum VCE : 50V Max collector current: 500mA
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Max power dissipation: 4W.
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N- Channel JFET
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Gate
–drain voltage = -40V
Gate
current = 10mA
Drain
Power dissipation = 400mW
Junction
temperature = 175 C
Storage
temperature = -55 to 125C
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P-Channel JFET
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FET
Feature : Logic level gate
Drain
to Source voltage(Vds ) : 5v
Current
Drain : 460mA
Input
capacitance : Vds 63pF at10 v
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Uni Junction Transistor
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Peak emitter current (Ip)
= 2A Continuous IE = 50 Inter Base Voltage (VBB)
= 35V Emitter Base Reverse Voltage (VEB2) = -30V Power dissipation at 25°C = 300mW
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S C R
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Voltage
off state = 800V
Current on state(RMS)) =12A
Current gate
trigger(IGT) = 30mA
Current
Hold (max) = 50mA
Voltage
gate trigger(max) = 1.5V
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L E D
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Rated L E D Life : 50,000 Hrs
Efficacy :
>90 Lumens/ Watts
Wattage equivalent 100W
Power consumption = 1000h & 14KWH
Working Temperature: -30°C~+50°C
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DIAC
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DB301 DB3
1.Break over voltage range:
30 to 34v;
2.Breakover
Current : Max :100uA;
3.Leakage
Current :Max:10uA;
4.Peak
Current :2A;
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D-MOSFET N Channel
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1.Current rating up to 1000v.
2.current rating as high as 300A
3drain to source.VDS=-20v
4.Absolute maximum rating TA=250C
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Photo Transistor
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Collector to Emitter Sustaining Voltage-30 V
Emitter to Collector Breakdown Voltage - 5 V
Collector Current - 25 m A
Operating
Temperature Range : -40 to +85 ̇
Storage Temperature Range :
-40 to +85 ̇C
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D-MOSFET N Channel
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1.Current rating up to 1000v.
2.current rating as high as 300A
3drain to source.VDS=-20v
4.Absolute maximum rating TA=250C
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Photo Diode
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Capacitance VR=0v ; T=22 ̇c
λ=400nm
Forward voltage IF=2ma,T=22 ̇c
Break down voltage IR=10 μA T=22 ̇c
Rise temperature VR=0V
λ =632nm RL=50Ω
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Photo Transistor
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Collector to Emitter Sustaining Voltage-30 V
Emitter to Collector Breakdown Voltage - 5 V
Collector Current - 25 m A
Operating
Temperature Range : -40 to +85 ̇
Storage Temperature Range :
-40 to +85 ̇C
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